HEADER BIOSYNTHETIC PROTEIN 04-AUG-06 2HY6 TITLE A SEVEN-HELIX COILED COIL COMPND MOL_ID: 1; COMPND 2 MOLECULE: GENERAL CONTROL PROTEIN GCN4; COMPND 3 CHAIN: A, B, C, D, E, F, G; COMPND 4 FRAGMENT: RESIDUES 250-281; COMPND 5 SYNONYM: AMINO ACID BIOSYNTHESIS REGULATORY PROTEIN; COMPND 6 ENGINEERED: YES; COMPND 7 MUTATION: YES SOURCE MOL_ID: 1; SOURCE 2 ORGANISM_SCIENTIFIC: SACCHAROMYCES CEREVISIAE; SOURCE 3 ORGANISM_COMMON: BAKER'S YEAST; SOURCE 4 ORGANISM_TAXID: 4932; SOURCE 5 GENE: GCN4, AAS3, ARG9; SOURCE 6 EXPRESSION_SYSTEM: ESCHERICHIA COLI; SOURCE 7 EXPRESSION_SYSTEM_TAXID: 562 KEYWDS PROTEIN DESIGN, PARALLEL HEPTAMER, PROTEIN STRUCTURE, BIOSYNTHETIC KEYWDS 2 PROTEIN EXPDTA X-RAY DIFFRACTION AUTHOR J.LIU,Q.ZHENG,Y.DENG,C.S.CHENG,N.R.KALLENBACH,M.LU REVDAT 6 20-OCT-21 2HY6 1 REMARK SEQADV REVDAT 5 18-OCT-17 2HY6 1 REMARK REVDAT 4 13-JUL-11 2HY6 1 VERSN REVDAT 3 24-FEB-09 2HY6 1 VERSN REVDAT 2 31-OCT-06 2HY6 1 JRNL REVDAT 1 24-OCT-06 2HY6 0 JRNL AUTH J.LIU,Q.ZHENG,Y.DENG,C.S.CHENG,N.R.KALLENBACH,M.LU JRNL TITL A SEVEN-HELIX COILED COIL. JRNL REF PROC.NATL.ACAD.SCI.USA V. 103 15457 2006 JRNL REFN ISSN 0027-8424 JRNL PMID 17030805 JRNL DOI 10.1073/PNAS.0604871103 REMARK 2 REMARK 2 RESOLUTION. 1.25 ANGSTROMS. REMARK 3 REMARK 3 REFINEMENT. REMARK 3 PROGRAM : REFMAC 5.2.0019 REMARK 3 AUTHORS : MURSHUDOV,SKUBAK,LEBEDEV,PANNU,STEINER, REMARK 3 : NICHOLLS,WINN,LONG,VAGIN REMARK 3 REMARK 3 REFINEMENT TARGET : MAXIMUM LIKELIHOOD REMARK 3 REMARK 3 DATA USED IN REFINEMENT. REMARK 3 RESOLUTION RANGE HIGH (ANGSTROMS) : 1.25 REMARK 3 RESOLUTION RANGE LOW (ANGSTROMS) : 47.50 REMARK 3 DATA CUTOFF (SIGMA(F)) : 0.000 REMARK 3 COMPLETENESS FOR RANGE (%) : 91.8 REMARK 3 NUMBER OF REFLECTIONS : 51370 REMARK 3 REMARK 3 FIT TO DATA USED IN REFINEMENT. REMARK 3 CROSS-VALIDATION METHOD : THROUGHOUT REMARK 3 FREE R VALUE TEST SET SELECTION : RANDOM REMARK 3 R VALUE (WORKING + TEST SET) : 0.182 REMARK 3 R VALUE (WORKING SET) : 0.181 REMARK 3 FREE R VALUE : 0.209 REMARK 3 FREE R VALUE TEST SET SIZE (%) : 5.100 REMARK 3 FREE R VALUE TEST SET COUNT : 2596 REMARK 3 REMARK 3 FIT IN THE HIGHEST RESOLUTION BIN. REMARK 3 TOTAL NUMBER OF BINS USED : 20 REMARK 3 BIN RESOLUTION RANGE HIGH (A) : 1.25 REMARK 3 BIN RESOLUTION RANGE LOW (A) : 1.28 REMARK 3 REFLECTION IN BIN (WORKING SET) : 3333 REMARK 3 BIN COMPLETENESS (WORKING+TEST) (%) : 90.30 REMARK 3 BIN R VALUE (WORKING SET) : 0.2380 REMARK 3 BIN FREE R VALUE SET COUNT : 166 REMARK 3 BIN FREE R VALUE : 0.2300 REMARK 3 REMARK 3 NUMBER OF NON-HYDROGEN ATOMS USED IN REFINEMENT. REMARK 3 PROTEIN ATOMS : 1593 REMARK 3 NUCLEIC ACID ATOMS : 0 REMARK 3 HETEROGEN ATOMS : 64 REMARK 3 SOLVENT ATOMS : 179 REMARK 3 REMARK 3 B VALUES. REMARK 3 B VALUE TYPE : LIKELY RESIDUAL REMARK 3 FROM WILSON PLOT (A**2) : 12.50 REMARK 3 MEAN B VALUE (OVERALL, A**2) : 23.34 REMARK 3 OVERALL ANISOTROPIC B VALUE. REMARK 3 B11 (A**2) : -1.25000 REMARK 3 B22 (A**2) : -0.97000 REMARK 3 B33 (A**2) : 2.30000 REMARK 3 B12 (A**2) : 0.00000 REMARK 3 B13 (A**2) : 0.25000 REMARK 3 B23 (A**2) : 0.42000 REMARK 3 REMARK 3 ESTIMATED OVERALL COORDINATE ERROR. REMARK 3 ESU BASED ON R VALUE (A): 0.050 REMARK 3 ESU BASED ON FREE R VALUE (A): 0.053 REMARK 3 ESU BASED ON MAXIMUM LIKELIHOOD (A): 0.035 REMARK 3 ESU FOR B VALUES BASED ON MAXIMUM LIKELIHOOD (A**2): 1.741 REMARK 3 REMARK 3 CORRELATION COEFFICIENTS. REMARK 3 CORRELATION COEFFICIENT FO-FC : 0.958 REMARK 3 CORRELATION COEFFICIENT FO-FC FREE : 0.942 REMARK 3 REMARK 3 RMS DEVIATIONS FROM IDEAL VALUES COUNT RMS WEIGHT REMARK 3 BOND LENGTHS REFINED ATOMS (A): 1675 ; 0.009 ; 0.022 REMARK 3 BOND LENGTHS OTHERS (A): NULL ; NULL ; NULL REMARK 3 BOND ANGLES REFINED ATOMS (DEGREES): 2238 ; 1.081 ; 1.976 REMARK 3 BOND ANGLES OTHERS (DEGREES): NULL ; NULL ; NULL REMARK 3 TORSION ANGLES, PERIOD 1 (DEGREES): 211 ; 3.589 ; 5.000 REMARK 3 TORSION ANGLES, PERIOD 2 (DEGREES): 71 ;31.495 ;25.775 REMARK 3 TORSION ANGLES, PERIOD 3 (DEGREES): 273 ;12.985 ;15.000 REMARK 3 TORSION ANGLES, PERIOD 4 (DEGREES): 8 ;15.263 ;15.000 REMARK 3 CHIRAL-CENTER RESTRAINTS (A**3): 274 ; 0.057 ; 0.200 REMARK 3 GENERAL PLANES REFINED ATOMS (A): 1182 ; 0.005 ; 0.020 REMARK 3 GENERAL PLANES OTHERS (A): NULL ; NULL ; NULL REMARK 3 NON-BONDED CONTACTS REFINED ATOMS (A): 846 ; 0.203 ; 0.200 REMARK 3 NON-BONDED CONTACTS OTHERS (A): NULL ; NULL ; NULL REMARK 3 NON-BONDED TORSION REFINED ATOMS (A): 1166 ; 0.290 ; 0.200 REMARK 3 NON-BONDED TORSION OTHERS (A): NULL ; NULL ; NULL REMARK 3 H-BOND (X...Y) REFINED ATOMS (A): 103 ; 0.112 ; 0.200 REMARK 3 H-BOND (X...Y) OTHERS (A): NULL ; NULL ; NULL REMARK 3 POTENTIAL METAL-ION REFINED ATOMS (A): NULL ; NULL ; NULL REMARK 3 POTENTIAL METAL-ION OTHERS (A): NULL ; NULL ; NULL REMARK 3 SYMMETRY VDW REFINED ATOMS (A): 56 ; 0.213 ; 0.200 REMARK 3 SYMMETRY VDW OTHERS (A): NULL ; NULL ; NULL REMARK 3 SYMMETRY H-BOND REFINED ATOMS (A): 21 ; 0.177 ; 0.200 REMARK 3 SYMMETRY H-BOND OTHERS (A): NULL ; NULL ; NULL REMARK 3 SYMMETRY METAL-ION REFINED ATOMS (A): NULL ; NULL ; NULL REMARK 3 SYMMETRY METAL-ION OTHERS (A): NULL ; NULL ; NULL REMARK 3 REMARK 3 ISOTROPIC THERMAL FACTOR RESTRAINTS. COUNT RMS WEIGHT REMARK 3 MAIN-CHAIN BOND REFINED ATOMS (A**2): 1119 ; 0.795 ; 1.500 REMARK 3 MAIN-CHAIN BOND OTHER ATOMS (A**2): NULL ; NULL ; NULL REMARK 3 MAIN-CHAIN ANGLE REFINED ATOMS (A**2): 1690 ; 1.251 ; 2.000 REMARK 3 MAIN-CHAIN ANGLE OTHER ATOMS (A**2): NULL ; NULL ; NULL REMARK 3 SIDE-CHAIN BOND REFINED ATOMS (A**2): 616 ; 2.596 ; 3.000 REMARK 3 SIDE-CHAIN BOND OTHER ATOMS (A**2): NULL ; NULL ; NULL REMARK 3 SIDE-CHAIN ANGLE REFINED ATOMS (A**2): 548 ; 3.966 ; 4.500 REMARK 3 SIDE-CHAIN ANGLE OTHER ATOMS (A**2): NULL ; NULL ; NULL REMARK 3 LONG RANGE B REFINED ATOMS (A**2): NULL ; NULL ; NULL REMARK 3 LONG RANGE B OTHER ATOMS (A**2): NULL ; NULL ; NULL REMARK 3 REMARK 3 ANISOTROPIC THERMAL FACTOR RESTRAINTS. COUNT RMS WEIGHT REMARK 3 RIGID-BOND RESTRAINTS (A**2): NULL ; NULL ; NULL REMARK 3 SPHERICITY; FREE ATOMS (A**2): NULL ; NULL ; NULL REMARK 3 SPHERICITY; BONDED ATOMS (A**2): NULL ; NULL ; NULL REMARK 3 REMARK 3 NCS RESTRAINTS STATISTICS REMARK 3 NUMBER OF DIFFERENT NCS GROUPS : NULL REMARK 3 REMARK 3 TLS DETAILS REMARK 3 NUMBER OF TLS GROUPS : 7 REMARK 3 REMARK 3 TLS GROUP : 1 REMARK 3 NUMBER OF COMPONENTS GROUP : 1 REMARK 3 COMPONENTS C SSSEQI TO C SSSEQI REMARK 3 RESIDUE RANGE : A 3 A 33 REMARK 3 ORIGIN FOR THE GROUP (A): -2.9860 8.3290 -3.6580 REMARK 3 T TENSOR REMARK 3 T11: -0.0536 T22: -0.0288 REMARK 3 T33: -0.1541 T12: 0.0049 REMARK 3 T13: 0.0072 T23: 0.0052 REMARK 3 L TENSOR REMARK 3 L11: 1.4334 L22: 6.0275 REMARK 3 L33: 5.5917 L12: -0.1371 REMARK 3 L13: -0.1575 L23: 4.1761 REMARK 3 S TENSOR REMARK 3 S11: 0.0041 S12: -0.1803 S13: 0.0069 REMARK 3 S21: 0.3024 S22: -0.0978 S23: 0.1766 REMARK 3 S31: 0.0857 S32: -0.1258 S33: 0.0937 REMARK 3 REMARK 3 TLS GROUP : 2 REMARK 3 NUMBER OF COMPONENTS GROUP : 1 REMARK 3 COMPONENTS C SSSEQI TO C SSSEQI REMARK 3 RESIDUE RANGE : B 3 B 33 REMARK 3 ORIGIN FOR THE GROUP (A): -6.4770 13.7690 -8.3860 REMARK 3 T TENSOR REMARK 3 T11: -0.0766 T22: -0.0557 REMARK 3 T33: -0.1580 T12: 0.0094 REMARK 3 T13: 0.0113 T23: -0.0047 REMARK 3 L TENSOR REMARK 3 L11: 2.0864 L22: 4.3890 REMARK 3 L33: 3.3263 L12: 0.8199 REMARK 3 L13: 0.8319 L23: 2.6072 REMARK 3 S TENSOR REMARK 3 S11: 0.0222 S12: -0.1012 S13: 0.0968 REMARK 3 S21: 0.1008 S22: -0.1205 S23: 0.1980 REMARK 3 S31: -0.0014 S32: -0.0979 S33: 0.0982 REMARK 3 REMARK 3 TLS GROUP : 3 REMARK 3 NUMBER OF COMPONENTS GROUP : 1 REMARK 3 COMPONENTS C SSSEQI TO C SSSEQI REMARK 3 RESIDUE RANGE : C 3 C 33 REMARK 3 ORIGIN FOR THE GROUP (A): -3.4990 18.5910 -14.1390 REMARK 3 T TENSOR REMARK 3 T11: -0.0624 T22: -0.0687 REMARK 3 T33: -0.1572 T12: 0.0110 REMARK 3 T13: -0.0010 T23: -0.0119 REMARK 3 L TENSOR REMARK 3 L11: 2.0180 L22: 3.9901 REMARK 3 L33: 2.6072 L12: 1.5711 REMARK 3 L13: 1.7529 L23: 1.9790 REMARK 3 S TENSOR REMARK 3 S11: -0.0468 S12: -0.0690 S13: 0.0631 REMARK 3 S21: -0.1247 S22: -0.0648 S23: 0.1115 REMARK 3 S31: -0.1053 S32: -0.1491 S33: 0.1117 REMARK 3 REMARK 3 TLS GROUP : 4 REMARK 3 NUMBER OF COMPONENTS GROUP : 1 REMARK 3 COMPONENTS C SSSEQI TO C SSSEQI REMARK 3 RESIDUE RANGE : D 3 D 34 REMARK 3 ORIGIN FOR THE GROUP (A): 3.1950 18.0430 -18.9360 REMARK 3 T TENSOR REMARK 3 T11: -0.0398 T22: -0.0823 REMARK 3 T33: -0.1655 T12: 0.0130 REMARK 3 T13: 0.0036 T23: -0.0020 REMARK 3 L TENSOR REMARK 3 L11: 2.1163 L22: 2.8345 REMARK 3 L33: 4.2123 L12: 1.2120 REMARK 3 L13: 1.7581 L23: 2.1019 REMARK 3 S TENSOR REMARK 3 S11: -0.0763 S12: 0.0915 S13: 0.0896 REMARK 3 S21: -0.2310 S22: 0.0307 S23: -0.0413 REMARK 3 S31: -0.1525 S32: 0.0228 S33: 0.0456 REMARK 3 REMARK 3 TLS GROUP : 5 REMARK 3 NUMBER OF COMPONENTS GROUP : 1 REMARK 3 COMPONENTS C SSSEQI TO C SSSEQI REMARK 3 RESIDUE RANGE : E 3 E 33 REMARK 3 ORIGIN FOR THE GROUP (A): 9.9420 13.5700 -18.0610 REMARK 3 T TENSOR REMARK 3 T11: -0.0487 T22: -0.0854 REMARK 3 T33: -0.1673 T12: 0.0093 REMARK 3 T13: 0.0132 T23: -0.0051 REMARK 3 L TENSOR REMARK 3 L11: 2.9898 L22: 1.9834 REMARK 3 L33: 5.9603 L12: 1.3427 REMARK 3 L13: 2.8227 L23: 2.2723 REMARK 3 S TENSOR REMARK 3 S11: -0.0567 S12: 0.1450 S13: 0.0191 REMARK 3 S21: -0.1747 S22: 0.1031 S23: -0.0588 REMARK 3 S31: -0.1840 S32: 0.1616 S33: -0.0464 REMARK 3 REMARK 3 TLS GROUP : 6 REMARK 3 NUMBER OF COMPONENTS GROUP : 1 REMARK 3 COMPONENTS C SSSEQI TO C SSSEQI REMARK 3 RESIDUE RANGE : F 1 F 32 REMARK 3 ORIGIN FOR THE GROUP (A): 10.9580 6.9300 -12.6400 REMARK 3 T TENSOR REMARK 3 T11: -0.0763 T22: -0.0894 REMARK 3 T33: -0.1697 T12: 0.0095 REMARK 3 T13: 0.0040 T23: -0.0098 REMARK 3 L TENSOR REMARK 3 L11: 1.7649 L22: 2.0961 REMARK 3 L33: 5.5524 L12: 0.2720 REMARK 3 L13: 1.1450 L23: 1.1852 REMARK 3 S TENSOR REMARK 3 S11: 0.0442 S12: -0.0441 S13: -0.0186 REMARK 3 S21: 0.0383 S22: 0.0340 S23: -0.0567 REMARK 3 S31: 0.1330 S32: 0.0818 S33: -0.0782 REMARK 3 REMARK 3 TLS GROUP : 7 REMARK 3 NUMBER OF COMPONENTS GROUP : 1 REMARK 3 COMPONENTS C SSSEQI TO C SSSEQI REMARK 3 RESIDUE RANGE : G 3 G 32 REMARK 3 ORIGIN FOR THE GROUP (A): 5.4360 1.2230 -11.1100 REMARK 3 T TENSOR REMARK 3 T11: -0.0718 T22: -0.0896 REMARK 3 T33: -0.1710 T12: 0.0013 REMARK 3 T13: -0.0061 T23: -0.0031 REMARK 3 L TENSOR REMARK 3 L11: 1.1300 L22: 3.3914 REMARK 3 L33: 5.1139 L12: -0.3594 REMARK 3 L13: -0.0531 L23: 2.4693 REMARK 3 S TENSOR REMARK 3 S11: 0.0239 S12: -0.0614 S13: -0.0448 REMARK 3 S21: -0.0115 S22: 0.0231 S23: 0.0006 REMARK 3 S31: 0.0748 S32: -0.0098 S33: -0.0470 REMARK 3 REMARK 3 BULK SOLVENT MODELLING. REMARK 3 METHOD USED : BABINET MODEL WITH MASK REMARK 3 PARAMETERS FOR MASK CALCULATION REMARK 3 VDW PROBE RADIUS : 1.40 REMARK 3 ION PROBE RADIUS : 0.80 REMARK 3 SHRINKAGE RADIUS : 0.80 REMARK 3 REMARK 3 OTHER REFINEMENT REMARKS: NULL REMARK 4 REMARK 4 2HY6 COMPLIES WITH FORMAT V. 3.30, 13-JUL-11 REMARK 100 REMARK 100 THIS ENTRY HAS BEEN PROCESSED BY RCSB ON 10-AUG-06. REMARK 100 THE DEPOSITION ID IS D_1000038900. REMARK 200 REMARK 200 EXPERIMENTAL DETAILS REMARK 200 EXPERIMENT TYPE : X-RAY DIFFRACTION REMARK 200 DATE OF DATA COLLECTION : 25-FEB-06 REMARK 200 TEMPERATURE (KELVIN) : 100.0 REMARK 200 PH : 5.4 REMARK 200 NUMBER OF CRYSTALS USED : 1 REMARK 200 REMARK 200 SYNCHROTRON (Y/N) : Y REMARK 200 RADIATION SOURCE : NSLS REMARK 200 BEAMLINE : X4C REMARK 200 X-RAY GENERATOR MODEL : NULL REMARK 200 MONOCHROMATIC OR LAUE (M/L) : M REMARK 200 WAVELENGTH OR RANGE (A) : 0.9795 REMARK 200 MONOCHROMATOR : GRAPHITE REMARK 200 OPTICS : NULL REMARK 200 REMARK 200 DETECTOR TYPE : IMAGE PLATE REMARK 200 DETECTOR MANUFACTURER : MAR SCANNER 345 MM PLATE REMARK 200 INTENSITY-INTEGRATION SOFTWARE : DENZO REMARK 200 DATA SCALING SOFTWARE : SCALEPACK REMARK 200 REMARK 200 NUMBER OF UNIQUE REFLECTIONS : 51370 REMARK 200 RESOLUTION RANGE HIGH (A) : 1.250 REMARK 200 RESOLUTION RANGE LOW (A) : 47.500 REMARK 200 REJECTION CRITERIA (SIGMA(I)) : 0.000 REMARK 200 REMARK 200 OVERALL. REMARK 200 COMPLETENESS FOR RANGE (%) : 91.8 REMARK 200 DATA REDUNDANCY : 2.000 REMARK 200 R MERGE (I) : 0.04600 REMARK 200 R SYM (I) : NULL REMARK 200 FOR THE DATA SET : 12.2000 REMARK 200 REMARK 200 IN THE HIGHEST RESOLUTION SHELL. REMARK 200 HIGHEST RESOLUTION SHELL, RANGE HIGH (A) : 1.25 REMARK 200 HIGHEST RESOLUTION SHELL, RANGE LOW (A) : 1.27 REMARK 200 COMPLETENESS FOR SHELL (%) : 91.4 REMARK 200 DATA REDUNDANCY IN SHELL : 2.00 REMARK 200 R MERGE FOR SHELL (I) : 0.33900 REMARK 200 R SYM FOR SHELL (I) : NULL REMARK 200 FOR SHELL : 2.300 REMARK 200 REMARK 200 DIFFRACTION PROTOCOL: SINGLE WAVELENGTH REMARK 200 METHOD USED TO DETERMINE THE STRUCTURE: MOLECULAR REPLACEMENT REMARK 200 SOFTWARE USED: PHASER REMARK 200 STARTING MODEL: PDB ENTRY 2B1F REMARK 200 REMARK 200 REMARK: NULL REMARK 280 REMARK 280 CRYSTAL REMARK 280 SOLVENT CONTENT, VS (%): 39.62 REMARK 280 MATTHEWS COEFFICIENT, VM (ANGSTROMS**3/DA): 2.04 REMARK 280 REMARK 280 CRYSTALLIZATION CONDITIONS: 0.1M POTASSIUM DIHYDROGEN PHOSPHATE, REMARK 280 1.4M HEXANEDIOL, PH 5.4, VAPOR DIFFUSION, HANGING DROP, REMARK 280 TEMPERATURE 295K REMARK 290 REMARK 290 CRYSTALLOGRAPHIC SYMMETRY REMARK 290 SYMMETRY OPERATORS FOR SPACE GROUP: P 1 REMARK 290 REMARK 290 SYMOP SYMMETRY REMARK 290 NNNMMM OPERATOR REMARK 290 1555 X,Y,Z REMARK 290 REMARK 290 WHERE NNN -> OPERATOR NUMBER REMARK 290 MMM -> TRANSLATION VECTOR REMARK 290 REMARK 290 CRYSTALLOGRAPHIC SYMMETRY TRANSFORMATIONS REMARK 290 THE FOLLOWING TRANSFORMATIONS OPERATE ON THE ATOM/HETATM REMARK 290 RECORDS IN THIS ENTRY TO PRODUCE CRYSTALLOGRAPHICALLY REMARK 290 RELATED MOLECULES. REMARK 290 SMTRY1 1 1.000000 0.000000 0.000000 0.00000 REMARK 290 SMTRY2 1 0.000000 1.000000 0.000000 0.00000 REMARK 290 SMTRY3 1 0.000000 0.000000 1.000000 0.00000 REMARK 290 REMARK 290 REMARK: NULL REMARK 300 REMARK 300 BIOMOLECULE: 1 REMARK 300 SEE REMARK 350 FOR THE AUTHOR PROVIDED AND/OR PROGRAM REMARK 300 GENERATED ASSEMBLY INFORMATION FOR THE STRUCTURE IN REMARK 300 THIS ENTRY. THE REMARK MAY ALSO PROVIDE INFORMATION ON REMARK 300 BURIED SURFACE AREA. REMARK 300 REMARK: THE BIOLOGICAL ASSEMBLY IS A HEPTAMER. REMARK 350 REMARK 350 COORDINATES FOR A COMPLETE MULTIMER REPRESENTING THE KNOWN REMARK 350 BIOLOGICALLY SIGNIFICANT OLIGOMERIZATION STATE OF THE REMARK 350 MOLECULE CAN BE GENERATED BY APPLYING BIOMT TRANSFORMATIONS REMARK 350 GIVEN BELOW. BOTH NON-CRYSTALLOGRAPHIC AND REMARK 350 CRYSTALLOGRAPHIC OPERATIONS ARE GIVEN. REMARK 350 REMARK 350 BIOMOLECULE: 1 REMARK 350 AUTHOR DETERMINED BIOLOGICAL UNIT: HEPTAMERIC REMARK 350 SOFTWARE DETERMINED QUATERNARY STRUCTURE: HEPTAMERIC REMARK 350 SOFTWARE USED: PISA REMARK 350 TOTAL BURIED SURFACE AREA: 13320 ANGSTROM**2 REMARK 350 SURFACE AREA OF THE COMPLEX: 10630 ANGSTROM**2 REMARK 350 CHANGE IN SOLVENT FREE ENERGY: -77.0 KCAL/MOL REMARK 350 APPLY THE FOLLOWING TO CHAINS: A, B, C, D, E, F, G REMARK 350 BIOMT1 1 1.000000 0.000000 0.000000 0.00000 REMARK 350 BIOMT2 1 0.000000 1.000000 0.000000 0.00000 REMARK 350 BIOMT3 1 0.000000 0.000000 1.000000 0.00000 REMARK 465 REMARK 465 MISSING RESIDUES REMARK 465 THE FOLLOWING RESIDUES WERE NOT LOCATED IN THE REMARK 465 EXPERIMENT. (M=MODEL NUMBER; RES=RESIDUE NAME; C=CHAIN REMARK 465 IDENTIFIER; SSSEQ=SEQUENCE NUMBER; I=INSERTION CODE.) REMARK 465 REMARK 465 M RES C SSSEQI REMARK 465 MET A 1 REMARK 465 LYS A 2 REMARK 465 ARG A 34 REMARK 465 MET B 1 REMARK 465 LYS B 2 REMARK 465 ARG B 34 REMARK 465 MET C 1 REMARK 465 LYS C 2 REMARK 465 ARG C 34 REMARK 465 MET D 1 REMARK 465 LYS D 2 REMARK 465 MET E 1 REMARK 465 LYS E 2 REMARK 465 ARG E 34 REMARK 465 GLU F 33 REMARK 465 ARG F 34 REMARK 465 MET G 1 REMARK 465 LYS G 2 REMARK 465 GLU G 33 REMARK 465 ARG G 34 REMARK 800 REMARK 800 SITE REMARK 800 SITE_IDENTIFIER: AC1 REMARK 800 EVIDENCE_CODE: SOFTWARE REMARK 800 SITE_DESCRIPTION: BINDING SITE FOR RESIDUE HEZ F 201 REMARK 800 REMARK 800 SITE_IDENTIFIER: AC2 REMARK 800 EVIDENCE_CODE: SOFTWARE REMARK 800 SITE_DESCRIPTION: BINDING SITE FOR RESIDUE HEZ A 202 REMARK 800 REMARK 800 SITE_IDENTIFIER: AC3 REMARK 800 EVIDENCE_CODE: SOFTWARE REMARK 800 SITE_DESCRIPTION: BINDING SITE FOR RESIDUE HEZ D 203 REMARK 800 REMARK 800 SITE_IDENTIFIER: AC4 REMARK 800 EVIDENCE_CODE: SOFTWARE REMARK 800 SITE_DESCRIPTION: BINDING SITE FOR RESIDUE HEZ G 204 REMARK 800 REMARK 800 SITE_IDENTIFIER: AC5 REMARK 800 EVIDENCE_CODE: SOFTWARE REMARK 800 SITE_DESCRIPTION: BINDING SITE FOR RESIDUE HEZ F 205 REMARK 800 REMARK 800 SITE_IDENTIFIER: AC6 REMARK 800 EVIDENCE_CODE: SOFTWARE REMARK 800 SITE_DESCRIPTION: BINDING SITE FOR RESIDUE HEZ C 206 REMARK 800 REMARK 800 SITE_IDENTIFIER: AC7 REMARK 800 EVIDENCE_CODE: SOFTWARE REMARK 800 SITE_DESCRIPTION: BINDING SITE FOR RESIDUE HEZ D 207 REMARK 800 REMARK 800 SITE_IDENTIFIER: AC8 REMARK 800 EVIDENCE_CODE: SOFTWARE REMARK 800 SITE_DESCRIPTION: BINDING SITE FOR RESIDUE HEZ E 208 REMARK 900 REMARK 900 RELATED ENTRIES REMARK 900 RELATED ID: 2ZTA RELATED DB: PDB REMARK 900 X-RAY STRUCTURE OF THE GCN4 LEUCINE ZIPPER, A TWO STRANDED PARALLED REMARK 900 COILED COIL REMARK 900 RELATED ID: 1GCM RELATED DB: PDB REMARK 900 GCN4 LEUCINE ZIPPER CORE MUTANT P-LI REMARK 900 RELATED ID: 1GCL RELATED DB: PDB REMARK 900 GCN4 LEUCINE ZIPPER CORE MUTANT P-LI REMARK 900 RELATED ID: 2B1F RELATED DB: PDB REMARK 900 ANTIPARALLEL FOUR-STRANDED COILED COIL SPECIFIED BY A 3-3-1 REMARK 900 HYDROPHOBIC HEPTAD REPEAT REMARK 900 RELATED ID: 2B22 RELATED DB: PDB REMARK 900 ANTIPARALLEL FOUR-STRANDED COILED COIL SPECIFIED BY A 3-3-1 REMARK 900 HYDROPHOBIC HEPTAD REPEAT DBREF 2HY6 A 1 34 UNP P03069 GCN4_YEAST 250 281 DBREF 2HY6 B 1 34 UNP P03069 GCN4_YEAST 250 281 DBREF 2HY6 C 1 34 UNP P03069 GCN4_YEAST 250 281 DBREF 2HY6 D 1 34 UNP P03069 GCN4_YEAST 250 281 DBREF 2HY6 E 1 34 UNP P03069 GCN4_YEAST 250 281 DBREF 2HY6 F 1 34 UNP P03069 GCN4_YEAST 250 281 DBREF 2HY6 G 1 34 UNP P03069 GCN4_YEAST 250 281 SEQADV 2HY6 LYS A 2 UNP P03069 CLONING ARTIFACT SEQADV 2HY6 VAL A 3 UNP P03069 CLONING ARTIFACT SEQADV 2HY6 ALA A 7 UNP P03069 GLU 254 ENGINEERED MUTATION SEQADV 2HY6 ALA A 9 UNP P03069 LYS 256 ENGINEERED MUTATION SEQADV 2HY6 ALA A 14 UNP P03069 LEU 261 ENGINEERED MUTATION SEQADV 2HY6 ALA A 16 UNP P03069 LYS 263 ENGINEERED MUTATION SEQADV 2HY6 ALA A 21 UNP P03069 GLU 268 ENGINEERED MUTATION SEQADV 2HY6 ALA A 23 UNP P03069 GLU 270 ENGINEERED MUTATION SEQADV 2HY6 ALA A 28 UNP P03069 LYS 275 ENGINEERED MUTATION SEQADV 2HY6 ALA A 30 UNP P03069 LEU 277 ENGINEERED MUTATION SEQADV 2HY6 LYS B 2 UNP P03069 CLONING ARTIFACT SEQADV 2HY6 VAL B 3 UNP P03069 CLONING ARTIFACT SEQADV 2HY6 ALA B 7 UNP P03069 GLU 254 ENGINEERED MUTATION SEQADV 2HY6 ALA B 9 UNP P03069 LYS 256 ENGINEERED MUTATION SEQADV 2HY6 ALA B 14 UNP P03069 LEU 261 ENGINEERED MUTATION SEQADV 2HY6 ALA B 16 UNP P03069 LYS 263 ENGINEERED MUTATION SEQADV 2HY6 ALA B 21 UNP P03069 GLU 268 ENGINEERED MUTATION SEQADV 2HY6 ALA B 23 UNP P03069 GLU 270 ENGINEERED MUTATION SEQADV 2HY6 ALA B 28 UNP P03069 LYS 275 ENGINEERED MUTATION SEQADV 2HY6 ALA B 30 UNP P03069 LEU 277 ENGINEERED MUTATION SEQADV 2HY6 LYS C 2 UNP P03069 CLONING ARTIFACT SEQADV 2HY6 VAL C 3 UNP P03069 CLONING ARTIFACT SEQADV 2HY6 ALA C 7 UNP P03069 GLU 254 ENGINEERED MUTATION SEQADV 2HY6 ALA C 9 UNP P03069 LYS 256 ENGINEERED MUTATION SEQADV 2HY6 ALA C 14 UNP P03069 LEU 261 ENGINEERED MUTATION SEQADV 2HY6 ALA C 16 UNP P03069 LYS 263 ENGINEERED MUTATION SEQADV 2HY6 ALA C 21 UNP P03069 GLU 268 ENGINEERED MUTATION SEQADV 2HY6 ALA C 23 UNP P03069 GLU 270 ENGINEERED MUTATION SEQADV 2HY6 ALA C 28 UNP P03069 LYS 275 ENGINEERED MUTATION SEQADV 2HY6 ALA C 30 UNP P03069 LEU 277 ENGINEERED MUTATION SEQADV 2HY6 LYS D 2 UNP P03069 CLONING ARTIFACT SEQADV 2HY6 VAL D 3 UNP P03069 CLONING ARTIFACT SEQADV 2HY6 ALA D 7 UNP P03069 GLU 254 ENGINEERED MUTATION SEQADV 2HY6 ALA D 9 UNP P03069 LYS 256 ENGINEERED MUTATION SEQADV 2HY6 ALA D 14 UNP P03069 LEU 261 ENGINEERED MUTATION SEQADV 2HY6 ALA D 16 UNP P03069 LYS 263 ENGINEERED MUTATION SEQADV 2HY6 ALA D 21 UNP P03069 GLU 268 ENGINEERED MUTATION SEQADV 2HY6 ALA D 23 UNP P03069 GLU 270 ENGINEERED MUTATION SEQADV 2HY6 ALA D 28 UNP P03069 LYS 275 ENGINEERED MUTATION SEQADV 2HY6 ALA D 30 UNP P03069 LEU 277 ENGINEERED MUTATION SEQADV 2HY6 LYS E 2 UNP P03069 CLONING ARTIFACT SEQADV 2HY6 VAL E 3 UNP P03069 CLONING ARTIFACT SEQADV 2HY6 ALA E 7 UNP P03069 GLU 254 ENGINEERED MUTATION SEQADV 2HY6 ALA E 9 UNP P03069 LYS 256 ENGINEERED MUTATION SEQADV 2HY6 ALA E 14 UNP P03069 LEU 261 ENGINEERED MUTATION SEQADV 2HY6 ALA E 16 UNP P03069 LYS 263 ENGINEERED MUTATION SEQADV 2HY6 ALA E 21 UNP P03069 GLU 268 ENGINEERED MUTATION SEQADV 2HY6 ALA E 23 UNP P03069 GLU 270 ENGINEERED MUTATION SEQADV 2HY6 ALA E 28 UNP P03069 LYS 275 ENGINEERED MUTATION SEQADV 2HY6 ALA E 30 UNP P03069 LEU 277 ENGINEERED MUTATION SEQADV 2HY6 LYS F 2 UNP P03069 CLONING ARTIFACT SEQADV 2HY6 VAL F 3 UNP P03069 CLONING ARTIFACT SEQADV 2HY6 ALA F 7 UNP P03069 GLU 254 ENGINEERED MUTATION SEQADV 2HY6 ALA F 9 UNP P03069 LYS 256 ENGINEERED MUTATION SEQADV 2HY6 ALA F 14 UNP P03069 LEU 261 ENGINEERED MUTATION SEQADV 2HY6 ALA F 16 UNP P03069 LYS 263 ENGINEERED MUTATION SEQADV 2HY6 ALA F 21 UNP P03069 GLU 268 ENGINEERED MUTATION SEQADV 2HY6 ALA F 23 UNP P03069 GLU 270 ENGINEERED MUTATION SEQADV 2HY6 ALA F 28 UNP P03069 LYS 275 ENGINEERED MUTATION SEQADV 2HY6 ALA F 30 UNP P03069 LEU 277 ENGINEERED MUTATION SEQADV 2HY6 LYS G 2 UNP P03069 CLONING ARTIFACT SEQADV 2HY6 VAL G 3 UNP P03069 CLONING ARTIFACT SEQADV 2HY6 ALA G 7 UNP P03069 GLU 254 ENGINEERED MUTATION SEQADV 2HY6 ALA G 9 UNP P03069 LYS 256 ENGINEERED MUTATION SEQADV 2HY6 ALA G 14 UNP P03069 LEU 261 ENGINEERED MUTATION SEQADV 2HY6 ALA G 16 UNP P03069 LYS 263 ENGINEERED MUTATION SEQADV 2HY6 ALA G 21 UNP P03069 GLU 268 ENGINEERED MUTATION SEQADV 2HY6 ALA G 23 UNP P03069 GLU 270 ENGINEERED MUTATION SEQADV 2HY6 ALA G 28 UNP P03069 LYS 275 ENGINEERED MUTATION SEQADV 2HY6 ALA G 30 UNP P03069 LEU 277 ENGINEERED MUTATION SEQRES 1 A 34 MET LYS VAL LYS GLN LEU ALA ASP ALA VAL GLU GLU LEU SEQRES 2 A 34 ALA SER ALA ASN TYR HIS LEU ALA ASN ALA VAL ALA ARG SEQRES 3 A 34 LEU ALA LYS ALA VAL GLY GLU ARG SEQRES 1 B 34 MET LYS VAL LYS GLN LEU ALA ASP ALA VAL GLU GLU LEU SEQRES 2 B 34 ALA SER ALA ASN TYR HIS LEU ALA ASN ALA VAL ALA ARG SEQRES 3 B 34 LEU ALA LYS ALA VAL GLY GLU ARG SEQRES 1 C 34 MET LYS VAL LYS GLN LEU ALA ASP ALA VAL GLU GLU LEU SEQRES 2 C 34 ALA SER ALA ASN TYR HIS LEU ALA ASN ALA VAL ALA ARG SEQRES 3 C 34 LEU ALA LYS ALA VAL GLY GLU ARG SEQRES 1 D 34 MET LYS VAL LYS GLN LEU ALA ASP ALA VAL GLU GLU LEU SEQRES 2 D 34 ALA SER ALA ASN TYR HIS LEU ALA ASN ALA VAL ALA ARG SEQRES 3 D 34 LEU ALA LYS ALA VAL GLY GLU ARG SEQRES 1 E 34 MET LYS VAL LYS GLN LEU ALA ASP ALA VAL GLU GLU LEU SEQRES 2 E 34 ALA SER ALA ASN TYR HIS LEU ALA ASN ALA VAL ALA ARG SEQRES 3 E 34 LEU ALA LYS ALA VAL GLY GLU ARG SEQRES 1 F 34 MET LYS VAL LYS GLN LEU ALA ASP ALA VAL GLU GLU LEU SEQRES 2 F 34 ALA SER ALA ASN TYR HIS LEU ALA ASN ALA VAL ALA ARG SEQRES 3 F 34 LEU ALA LYS ALA VAL GLY GLU ARG SEQRES 1 G 34 MET LYS VAL LYS GLN LEU ALA ASP ALA VAL GLU GLU LEU SEQRES 2 G 34 ALA SER ALA ASN TYR HIS LEU ALA ASN ALA VAL ALA ARG SEQRES 3 G 34 LEU ALA LYS ALA VAL GLY GLU ARG HET HEZ A 202 8 HET HEZ C 206 8 HET HEZ D 203 8 HET HEZ D 207 8 HET HEZ E 208 8 HET HEZ F 201 8 HET HEZ F 205 8 HET HEZ G 204 8 HETNAM HEZ HEXANE-1,6-DIOL FORMUL 8 HEZ 8(C6 H14 O2) FORMUL 16 HOH *179(H2 O) HELIX 1 1 VAL A 3 GLU A 33 1 31 HELIX 2 2 VAL B 3 GLU B 33 1 31 HELIX 3 3 VAL C 3 GLU C 33 1 31 HELIX 4 4 VAL D 3 ARG D 34 1 32 HELIX 5 5 VAL E 3 GLU E 33 1 31 HELIX 6 6 LYS F 2 GLY F 32 1 31 HELIX 7 7 VAL G 3 GLY G 32 1 30 SITE 1 AC1 1 HEZ A 202 SITE 1 AC2 7 ASN A 17 LEU A 20 ASN B 17 HEZ D 203 SITE 2 AC2 7 LEU F 13 HEZ F 201 LEU G 13 SITE 1 AC3 5 HEZ A 202 ASN B 17 ASN C 17 ASN D 17 SITE 2 AC3 5 ASN E 17 SITE 1 AC4 1 ASN G 17 SITE 1 AC5 2 VAL B 31 VAL F 31 SITE 1 AC6 9 LYS C 4 GLN C 5 ASP C 8 HOH C 220 SITE 2 AC6 9 LYS D 4 ALA D 7 ASP D 8 GLU D 11 SITE 3 AC6 9 TYR G 18 SITE 1 AC7 5 GLU D 11 SER D 15 TYR D 18 ASN G 22 SITE 2 AC7 5 HOH G 207 SITE 1 AC8 9 GLU A 12 HOH A 203 HOH A 204 SER B 15 SITE 2 AC8 9 HOH B 38 GLN E 5 ASP E 8 ASP F 8 SITE 3 AC8 9 GLU F 11 CRYST1 31.487 35.302 48.985 86.54 104.28 99.95 P 1 7 ORIGX1 1.000000 0.000000 0.000000 0.00000 ORIGX2 0.000000 1.000000 0.000000 0.00000 ORIGX3 0.000000 0.000000 1.000000 0.00000 SCALE1 0.031759 0.005569 0.007978 0.00000 SCALE2 0.000000 0.028759 -0.000536 0.00000 SCALE3 0.000000 0.000000 0.021068 0.00000 MASTER 430 0 8 7 0 0 15 6 0 0 0 21 END